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SD1446

Transistors RF Bipolar Power RF Transistor

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SeekIC No. : 00218296 Detail

SD1446: Transistors RF Bipolar Power RF Transistor

SD1446 Data Sheet

floor Price/Ceiling Price

US $ 28.8~43.2 / Piece | Get Latest Price
Part Number:
SD1446
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $43.2
  • $36
  • $32.4
  • $28.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Packaging : Tray    

Description

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging : Tray


Features:

.50 MHz
.12.5 VOLTS
.EFFICIENCY 55%
.COMMON EMITTER
.GOLD METALLIZATION
.POUT = 70 W MIN. WITH 10 dB GAIN


Specifications

Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage
36
V
VCEO Collector-Emitter Voltage
18
V
VEBO Emitter-Base Voltage
3.5
V
IC Device Current
12.0
A
PDISS Power Dissipation
183
W
TJ Junction Temperature
+200
TSTG Storage Temperature
65 to 150



Description

The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.




Parameters:

Technical/Catalog InformationSD1446
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)12A
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)18V
Gain10dB
Power - Max183W
Compression Point (P1dB)-
Package / CaseM113
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SD1446
SD1446
497 5458 ND
4975458ND
497-5458



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