Transistors RF Bipolar Power NPN 28V 170-230MHz
SD1459: Transistors RF Bipolar Power NPN 28V 170-230MHz
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| Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 30 V | ||
| Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 16 A | ||
| Maximum DC Collector Current : | 16 A | Power Dissipation : | 150000 mW | ||
| Package / Case : | M164 | Packaging : | Bulk |
| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
60 |
V |
| VCEO | Collector-Emitter Voltage |
30 |
V |
| VEBO | Emitter-Base Voltage |
4.0 |
V |
| IC | Device Current |
16 |
A |
| PDISS | Power Dissipation |
1 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1459 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers.