SD1487

Configuration : Single
Emitter- Base Voltage VEBO : 4 V
Packaging : Bulk
Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 18 V
Continuous Collector Current : 20 A
Maximum DC Collector Current : 20 A
Package / Case : M174
Power Dissipation : 290000 mW


Features:

.30 MHz
.12.5 VOLTS
.IMD -30 dB
.COMMON EMITTER
.GOLD METALLIZATION
·P_OUT = 100 W MIN. WITH 12.0 dB GAIN

Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	36	V
VCEO	Collector-Emitter Voltage	18	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Device Current	20	A
PDISS	Power Dissipation	290	W
TJ	Junction Temperature	+200
TSTG	Storage Temperature	65 to 150

Description

The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-theart diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.

Parameters:

Technical/Catalog Information	SD1487
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	20A
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Gain	-
Power - Max	290W
Compression Point (P1dB)	-
Package / Case	M174
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD1487 SD1487