DescriptionThe SD1496-3 is a 24V epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900-960MHz frequency range. The feature of SD1496-3 are as follows: (1)class C transistor; (2)frequency: 960MHz; (3)voltage: 24V; (4)power out: 55W; (5)power gain: 7.4dB; (...
SD1496-3: DescriptionThe SD1496-3 is a 24V epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900-960MHz frequency range. The feature of SD1496-3 are as follows: (1)c...
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The SD1496-3 is a 24V epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900-960MHz frequency range. The feature of SD1496-3 are as follows: (1)class C transistor; (2)frequency: 960MHz; (3)voltage: 24V; (4)power out: 55W; (5)power gain: 7.4dB; (6)efficiency: 50%; (7)common base.
The absolute maximum ratings of the SD1496-3 are: (1)collector-base voltage: 50V; (2)collector-emitter voltage: 26V; (3)emitter-base voltage: 4V; (4)collector current: 9A; (5)total power dissipation: 190W; (6)storage temperature: -65 to 150; (7)junction temperature:200.
The following is about the electrical characteristics of SD1496-3: (1)BVCES: 50V min at IC=50mA, VEB=0V; (2)BVCEO: 26V min at IC=50mA, IB=0; (3)BVEBO: 3V min at IE=10mA, IC=0; (4)ICBO: 5mA max at VCB=30V, IE=0; (5)hFE: 20 min at VCE=5V, IC=1A; (6)PO:55W min at f=960MHz, VCE=24V; (7)GP: 7.4dB min at f=960MHz, VCE=24V; (8)C: 50% typical at f=960MHz, VCE=24V.