DescriptionThe SD1496 is an NPN silicon epitaxial planar transistor designed for base station applications in the 860-900MHz frequency range. The feature of SD1496 are as follows: (1)class C transistor; (2)frequency: 900MHz; (3)voltage: 24V; (4)power out: 60W; (5)power gain: 7.5dB; (6)efficiency: ...
SD1496: DescriptionThe SD1496 is an NPN silicon epitaxial planar transistor designed for base station applications in the 860-900MHz frequency range. The feature of SD1496 are as follows: (1)class C transis...
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The SD1496 is an NPN silicon epitaxial planar transistor designed for base station applications in the 860-900MHz frequency range. The feature of SD1496 are as follows: (1)class C transistor; (2)frequency: 900MHz; (3)voltage: 24V; (4)power out: 60W; (5)power gain: 7.5dB; (6)efficiency: 50%; (7)common base.
The absolute maximum ratings of the SD1496 are: (1)collector-base voltage: 50V; (2)collector-emitter voltage: 26V; (3)emitter-base voltage: 4V; (4)collector current: 9A; (5)total power dissipation: 190W; (6)storage temperature: -65 to 150; (7)junction temperature:200.
The following is about the electrical characteristics of SD1496: (1)BVCES: 50V min at IC=50mA, VEB=0V; (2)BVCEO: 26V min at IC=50mA, IB=0; (3)BVEBO: 3V min at IE=10mA, IC=0; (4)ICBO: 5mA max at VCB=0V, IE=0; (5)hFE: 20 min at VCE=5V, IC=1A; (6)PO:60W min at f=860-900MHz, VCE=24V; (7)GP: 7.5dB min at f=860-900MHz, VCE=24V; (8)C: 50% typical at f=860-900MHz, VCE=24V; (9)Cob=55pF typical at VCE=24V, VCC=24V.