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SD1541-01

Features: ·DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS.400 (min.) DME 1025 - 1150 MHz .6.5 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS ·30:1 LOAD VSWR CAPABILITY AT SPECIFICIED OPERATING CONDITIONS · INPUT/OUTP...

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SD1541-01: Features: ·DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS.400 (min.) DME 1025 - 1150 MHz .6.5 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RE...

SD1541-01 Data Sheet

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Part Number:
SD1541-01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·DESIGNED FOR HIGH POWER PULSED
 IFF AND DME APPLICATIONS
.400 (min.) DME 1025 - 1150 MHz
.6.5 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
·30:1 LOAD VSWR CAPABILITY AT SPECIFICIED OPERATING CONDITIONS
· INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION


Specifications

</TABLE
Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage
65
V
VCEO Collector-Emitter Voltage
65
V
VEBO Emitter-Base Voltage
3.5
V
IC Device Current
22
A
PDISS Power Dissipation
1458
W
TJ Junction Temperature
+200
TSTG Storage Temperature
65 to 150



Description

The SD1541-01 is a hermetically sealed, gold metallized, silicon NPNpower transistor. The SD1541- 01 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance.




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