SD1564

The SD1564 is a hermetically sealed,gold metallized,silicon NPN pulsed power transistor.Features of the SD1564 are:(1)designed for high power pulse applications;(2)400W at 60s pulse width,2% D.F;(3)greater than 7.5dB gain;(4)refractory gold metallization;(5)emitter ballasting and low thermal resistance for reliability and ruggedness;(6)30:1 vswr capability at specific operating conditions;(7)input matched,common base configuration.;(8)balanced configuration(9)hermetic package.

The absolute maximum ratings of the SD1564 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 65.0,the unit is V;(2):the symbol is VCES,the parameter is collector-emitter voltage,the value is 65.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 28.8,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 1167.0,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1564 can be summarized as:(1):the symbol is BVCES,the test conditions is IC=10mA,VBE=0,the value is 65.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=5mA,IC=0,the value is 3.5,the unit is V;(3):the symbol is BVCBO,the test conditions is IC=25mA,IE=0,the value is 65.0,the unit is V;(4):the symbol is ICES,the test conditions is VCE=40.0V,VBE=0,the value is 20.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=500mA,the min is 20.0,the max is 120.0.