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SD1660

Features: .860 - 900 MHz .24 VOLTS .CLASS AB PUSH PULL .INTERNAL INPUT MATCHING ·DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY ·GOLD METALLIZATION FOR HIGH RELIABILITY ·DIFFUSED EMITTER BALLAST RESISTORS .COMMON EMITTER CONFIGURATION ·POUT = 120 W MIN. WITH 6.0 dB GAINS...

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SeekIC No. : 004486405 Detail

SD1660: Features: .860 - 900 MHz .24 VOLTS .CLASS AB PUSH PULL .INTERNAL INPUT MATCHING ·DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY ·GOLD METALLIZATION FOR HIGH RELIABILITY ·D...

SD1660 Data Sheet

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Part Number:
SD1660
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

.860 - 900 MHz
.24 VOLTS
.CLASS AB PUSH PULL
.INTERNAL INPUT MATCHING
·DESIGNED FOR HIGH POWER LINEAR OPERATION
.HIGH SATURATED POWER CAPABILITY
·GOLD METALLIZATION FOR HIGH RELIABILITY
·DIFFUSED EMITTER BALLAST RESISTORS
.COMMON EMITTER CONFIGURATION
·POUT = 120 W MIN. WITH 6.0 dB GAIN


Specifications

Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage
60
V
VCES Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
3.0
V
IC Device Current
25
A
PDISS Power Dissipation
310
W
TJ Junction Temperature
+200
TSTG Storage Temperature
65 to 150



Description

The SD1660 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.




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