SD200

Features:

High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz
Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz
(SD202, SD203, SSTSD203)
Low Interelectrode Capacitances




Application

High Gain VHF/UHF Amplifiers
Oscillators
Mixers




Specifications

PARAMETER Breakdown Voltages	SD200	SD201	SD202	SD203	UNIT
VDS	+25	+25	+20	+20	V
VDB	+25	+25	+20	+20	V
VGS	±40	-0.3	±40	-0.3	V
		+20		+20	V
VGB	±40	-0.3	±40	-0.3	V
		+20		+20	V
VGD	±40	-0.3	±40	-0.3	V
		+20		+20	V

Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below T_C = +25^oC) . . . . 1.8 W
Linear Derating Factor . . . . . . . . . . . . . . . . . 18 mW/ ^oC
Power Dissipation (at or below T_A = +25) . . . 360 mW
Linear Derating Factor . . . . . . . . . . . . . . . . . 3.6 mW/ ^oC
Operating Junction
Temperature Range . . . . . . . . . . . . . . -55^oC to + 125^oC
Storage Temperature Range . . . . . . . . -65^oC to +175^oC




Description

The SD200 series is manufactured utilizing Calogic's proprietary DMOS design and processing techniques. The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise. The DMOS structure is an inherently low capacitance and very high speed design resulting in a device that bridges JFETS and GaAs products in performance characteristics.