PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 3.0 A PDISS Power Dissipation 70 W TJ Junction Temperature +200 °C TSTG Storage ...
SD4013: PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.5 V IC Device Curren...
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| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 60 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 3.0 | A |
| PDISS | Power Dissipation | 70 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4013 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness.
The SD4013 can withstand 20:1 VSWRunder rated operating conditions and is internally input matched to optimize power gain and efficiency over the band.