PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VEBO Collector-Supply Voltage 3.5 V PDISS Power Dissipation 88 W IC Device Current 7.5 A TJ Junction Temperature 200 °C TSTG Storage...
SD4017: PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VEBO Collector-Supply Voltage 3.5 V PDISS Power Di...
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| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 48 | V |
| VCEO | Collector-Emitter Voltage | 25 | V |
| VEBO | Collector-Supply Voltage | 3.5 | V |
| PDISS | Power Dissipation | 88 | W |
| IC | Device Current | 7.5 | A |
| TJ | Junction Temperature | 200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications.