SD4017

PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VEBO Collector-Supply Voltage 3.5 V PDISS Power Dissipation 88 W IC Device Current 7.5 A TJ Junction Temperature 200 °C TSTG Storage...

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SD4017 Picture
SeekIC No. : 004486574 Detail

SD4017: PinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VEBO Collector-Supply Voltage 3.5 V PDISS Power Di...

floor Price/Ceiling Price

Part Number:
SD4017
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/18

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 48 V
VCEO Collector-Emitter Voltage 25 V
VEBO Collector-Supply Voltage 3.5 V
PDISS Power Dissipation 88 W
IC Device Current 7.5 A
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications.




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