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MFG:ST D/C:0208+


Part Number: SD56120M
MFG: ST
D/C: 0208+
Description: The SD56120M is a common source N-Channel enhancement- mode lateral Field-Effect RF power transistor d...
MFG:ST D/C:0208+


MFG: ST
D/C: 0208+
Description: The SD56120M is a common source N-Channel enhancement- mode lateral Field-Effect RF power transistor d...
The SD56120M is a common source N-Channel enhancement- mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current | 14 | A |
| PDISS | Power Dissipation (@ Tc = 70°C) | 236 | W |
| Tj | Max. Operating Junction Temperature | 200 | °C |
| TSTG | Storage Temperature | -65 to +150 | °C |
SD56120M
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