SD56120M

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 120 W
Continuous Drain Current : 14 A
Gain : 13 dB at 860 MHz
Package / Case : M252


Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSHPULL
• P_OUT = 120 W WITH 13 dB gain @ 860 MHz /32V
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	14	A
PDISS	Power Dissipation (@ Tc = 70°C)	236	W
Tj	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	-65 to +150	°C

Description

The SD56120M is a common source N-Channel enhancement- mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.

Parameters:

Technical/Catalog Information	SD56120M
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M252
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD56120M SD56120M 497 5473 5 ND 49754735ND 497-5473-5