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Part Number: SD56150

 

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Description: The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor des...


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SD56150 General Description


The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.

SD56150 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VGS Gate-Source Voltage ± 20 V
ID Device Current 17 A
PDISS Power Dissipation (@ Tc= 70oC) 236 W
TJ Max. Operating Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C

SD56150 Connection Diagram

SD56150 Connection Diagram

SD56150 datasheet

SD56150
PDF/DataSheet Download

  • Datasheet: SD56150
  • File Size: 220138 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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