SD56150

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Output Power : 150 W
Frequency : 1 GHz
Gain : 13 dB at 860 MHz
Package / Case : M252
Continuous Drain Current : 17 A


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Device Current	17	A
PDISS	Power Dissipation (@ Tc= 70oC)	236	W
TJ	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.