SD8250 Selling Leads, Price trend, SD8250 DataSheet download, circuit diagram from SeekIC.com

ApplicationREFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGEPOUT = 250 W MIN. WITH 8.0 dB GAINPinoutSpecifications Symbol Parameter Value Unit ...

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SeekIC No. : 004486748 Detail

SD8250: ApplicationREFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAG...

SD8250 Data Sheet

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Part Number:: SD8250
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/17

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Product Details

Description

Application

REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 250 W MIN. WITH 8.0 dB GAIN

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (T_C3 90°C)	575	W
I_C	Device Current*	20	A
V_CC	Collector-Supply Voltage*	55	V
T_J	Junction Temperature (Pulsed RF Operation)	250	°C
T_STG	Storage Temperature	- 65 to +200	°C

Description

The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output
and driver applications.

SD8250 is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive.

Low RF thermal resistance and computerized automatic wire bonding techniques of SD8250 ensure high reliability and product consistency.

The SD8250 is supplied in the AMPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.

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SD8250

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