Features: · Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM)· 512 ´ 8-bit organization· Supply voltage 5 V· Serial 2-line bus for data input and output (I2C Bus)· Reprogramming mode, 10 ms erase/write cycle· Reprogramming by means of on-chip con...
SDA 2546-5: Features: · Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM)· 512 ´ 8-bit organization· Supply voltage 5 V· Serial 2-line bus for data input and ...
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Features: · Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technolog...
Features: · Word-organized programmable nonvolatile memory in n-channel floating-gate technology (...

| Parameter | Symbol | Limit Values | Unit | |
| min. | max. | |||
| Supply voltage | VCC | 0.3 | 6 | V |
| Input voltage | VI | 0.3 | 6 | V |
| Power dissipation | PD | 130 | mW | |
| Storage temperature | Tstg | 40 | 125 | °C |
| Thermal resistance (system-air) | R th SA | 100 | K/W | |
| Junction temperature | Tj | 85 | °C | |
| Supply voltage | VCC | 4.75 | 5.25 | V |
| Ambient temperatureAmbient temperature | TA | 0 | 70 | °C |