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SDB10S30

Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recoverySpecifications Parameter Symbol Value Unit Continuous forward current, TC=100 IF 10 ...

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SeekIC No. : 004486946 Detail

SDB10S30: Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recoverySpecific...

SDB10S30 Data Sheet

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Part Number:
SDB10S30
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· No forward recovery


Specifications

Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
10
A
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave
TC=25, tp=10ms
IFSM
36
Repetitive peak forward current
Tj=150, TC=100, D=0.1
IFRM
45
Non repetitive peak forward current
tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25, tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175



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