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SDB3101F

Features: • Low power rectified• Silicon epitaxial type• High reliabilitySpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 30 V Repetitive peak forward current IFRM* 0.5 A Forward current IF 0.2 A Non-repetit...

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SeekIC No. : 004486976 Detail

SDB3101F: Features: • Low power rectified• Silicon epitaxial type• High reliabilitySpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 30 V Repe...

SDB3101F Data Sheet

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Part Number:
SDB3101F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• Low power rectified
• Silicon epitaxial type
• High reliability




Specifications

Characteristic
Symbol
Ratings
Unit
Reverse voltage
VR
30
V
Repetitive peak forward current
IFRM*
0.5
A
Forward current
IF
0.2
A
Non-repetitive peak forward current(10ms)
IFSM
2
A
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C





Description

High Current Capability and Low Forward Voltage Drop
This production of the SDB3101F is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also this production provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications





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