Features: • Low power rectified• Silicon epitaxial type• High reliabilityPinoutSpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 30 V Repetitive peak forward current IFRM* 0.5 A Forward current IF 0.2 A Non...
SDB310D: Features: • Low power rectified• Silicon epitaxial type• High reliabilityPinoutSpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 30 V...
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|
Characteristic |
Symbol |
Ratings |
Unit |
| Reverse voltage |
VR |
30 |
V |
| Repetitive peak forward current |
IFRM* |
0.5 |
A |
| Forward current |
IF |
0.2 |
A |
| Non-repetitive peak forward current(10ms) |
IFSM |
2 |
A |
| Power dissipation |
PD |
150 |
mW |
| Junction temperature |
Tj |
150 |
°C |
| Storage temperature |
Tstg |
-55 ~ 150 |
°C |
| High Current Capability and Low Forward Voltage Drop |
| This production of the SDB310D is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also this production provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications |