SDB720WS

The SDB720WS is a kind of silicon epitaxial planar schottky barrier diode which is for high frequency rectification. If you want to know more abput this device, please go to oue website for the detail imformation.

The characteristics at Ta = 25°C of SDB720WS can be summarized as (1)forward voltage at I F = 500 mA V F: 0.55 V; (2)reverse current at V R = 35 V I R: 100 A; (3)terminal capacitance at V R = 0 V, f = 1 MHz C T: 60pF; (4)reverse recovery time at I F = I R = 100 mA, I rr = 10 mA, R L = 100 t rr: 5nS.

The absolute maximum ratings of SDB720WS are (1)peak reverse voltage V RM: 40 V; (2)reverse voltage V R: 40 V; (3)average forward current I O: 0.5 A; (4)non-repetitive peak forward surge current I FSM: 2 A; (5)junction temperature T j: 125°C; (6)storage temperature range T stg: - 55 to + 150°C.