SDP20S30

Recovery Time :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Packaging : Tube
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 200 uA
Operating Temperature Range : - 55 C to + 175 C
Configuration : Dual Common Cathode
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Peak Reverse Voltage : 300 V
Max Surge Current : 36 A
Maximum Power Dissipation : 65 W


Features:

· Revolutionary semiconductor material - Silicon Carbide
·Switching behavior benchmark
· No reverse recovery
·No temperature influence on the switching behavior
· No forward recovery


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100	IF	10	A
RMS forward current, f=50Hz	IFRMS	14
Surge non repetitive forward current, sine halfwave TC=25 , tp=10ms	IFSM	36
Repetitive peak forward current Tj=150 , TC=100 , D=0.1	IFRM	45
Non repetitive peak forward current tp=10µs, TC=25	IFMAX	100
i 2t value, TC=25 , tp=10ms	i2dt	6.5	A²s
Repetitive peak reverse voltage	VRRM	300	V
Surge peak reverse voltage	VRSM	300
Power dissipation, single diode mode, TC=25	Ptot	65	W
Operating and storage temperature	Tj , Tstg	-55... +175

Parameters:

Technical/Catalog Information	SDP20S30
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	300V
Current - Average Rectified (Io) (per Diode)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Current - Reverse Leakage @ Vr	200A @ 300V
Reverse Recovery Time (trr)	0ns
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDP20S30 SDP20S30 SDP20S30IN ND SDP20S30INND SDP20S30IN