SDT04S60

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Maximum Reverse Leakage Current : 200 uA
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Package / Case : TO-220
Forward Continuous Current : 4 A
Forward Voltage Drop : 1.9 V
Max Surge Current : 12.5 A


Features:

• Worlds first 600V Schottky diode
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction up to 800W¹)
• No forward recovery


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100	IF	4	A
RMS forward current, f=50Hz	IFRMS	5.6
Surge non repetitive forward current, sine halfwave TC=25, tp=10ms	IFSM	12.5
Repetitive peak forward current Tj=150, TC=100, D=0.1	IFRM	18
Non repetitive peak forward current tp=10µs, TC=25	IFMAX	40
i 2t value, TC=25, tp=10ms	i2dt	0.78	A²s
Repetitive peak reverse voltage	VRRM	600	V
Surge peak reverse voltage	VRSM	600
Power dissipation, TC=25	Ptot	36.5	W
Operating and storage temperature	Tj , Tstg	-55... +175

Parameters:

Technical/Catalog Information	SDT04S60
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9V @ 4A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AC
Packaging	Tube
Capacitance @ Vr, F	150pF @ 0V, 1MHz
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDT04S60 SDT04S60 SDT04S60IN ND SDT04S60INND SDT04S60IN