SDT12S60

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Forward Continuous Current : 12 A
Package / Case : TO-220
Maximum Reverse Leakage Current : 400 uA
Forward Voltage Drop : 1.7 V
Max Surge Current : 36 A


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100°C	IF	12	A
RMS forward current, f=50Hz	IFRMS	17
Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms	IFSM	36
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1	IFRM	49
Non repetitive peak forward current tp=10s, TC=25°C	IFMAX	120
i 2t value, TC=25°C, tp=10ms	Ji2dt	6.48	A2s
Repetitive peak reverse voltage	VRRM	600	V
Surge peak reverse voltage	VRSM	600
Power dissipation, TC=25°C	Ptot	88.2	W
Operating and storage temperature	Tj,Tstg	-55to+175

Description

The SDT12S60 is a kind of silicon carbide Schottky diode. There are some features. (1) world's first 600V Schottky diode; (2) revolutionary semiconductor material-silicon carbide; (3) switching behavior benchmark; (4) no reverse recovery; (5) no temperature influence on the switching behavior; (6) no forward recovery.

What comes next is about the absolute maximum ratings of the SDT12S60. (1): IF (continuous forward current, TC=100) is 12 A; (2): IFRMS (RMS forward current, f=50 Hz) is 17 A; (3): IFSM (surge non repetitive forward current, sine halfwave TC=25, tp=10 ms) is 36 A; (4): IFRM (repetitive peak forward current Tj=150, TC=100, D=0.1) is 49 A; (5): IFMAX (non repetitive peak forward current tp=10s, TC=25) is 120 A; (6): VRRM (repetitive peak reverse voltage) is 600 V; (7): VRSM (surge peak reverse voltage) is 600 V; (8): Ptot (power dissipation of the SDT12S60, TC=25) is 88.2 W; (9): Tj, Tstg (operating and storage temperature) is from -55 to +175.

The following is about the static characteristics of the SDT12S60 at Tj=25, unless otherwise specified. (1): the typical VF (diode forward voltage) is 1.5 V and the maximum is 1.7 V at IF=12 A, Tj=25; (2): the typical VF (diode forward voltage) is 1.7 V and the maximum is 2.1 V at IF=12 A, Tj=150; (3): the typical IR (reverse current) is 400A and the maximum is 400A at VR=600 V, Tj=25; (4): the typical IR (reverse current) of the SDT12S60 is 100A and the maximum is 2000A at VR=600 V, Tj=150.

Parameters:

Technical/Catalog Information	SDT12S60
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	12A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 12A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	400A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AC
Packaging	Tube
Capacitance @ Vr, F	450pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDT12S60 SDT12S60 SDT12S60IN ND SDT12S60INND SDT12S60IN