SE1000W

Features: ` Single +5 V power supply` Input noise current = 12 nA rms when used with a 0.5 pF detector` Transimpedance gain = 15 k into a 50 load (single-ended)` On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk` 50 single-ended...

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SeekIC No. : 004487302 Detail

SE1000W: Features: ` Single +5 V power supply` Input noise current = 12 nA rms when used with a 0.5 pF detector` Transimpedance gain = 15 k into a 50 load (single-ended)` On-chip automatic gain control give...

floor Price/Ceiling Price

Part Number:
SE1000W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

` Single +5 V power supply
` Input noise current = 12 nA rms when used with a 0.5 pF detector
` Transimpedance gain = 15 k into a 50 load (single-ended)
` On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk
` 50 single-ended or 100 differential wire bond selectable outputs
` Bandwidth (-3 dB) = 150 MHz (min)
` Wide data rate range = 10 Mb/s to 155 Mb/s
` High input bias level = 2 V
` Minimal external components, supply decoupling only
` Operating junction temperature range = -40°C to +95°C
` Equivalent to Nortel Networks AB52



Application

· SONET/SDH-based transmission systems, test equipment and modules
· OC-3 fibre optic modules and line termination
· ATM and FDDI optical receivers



Specifications

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below.

Symbol
parameter
Min
Max
Unit
VCC
Supply Voltage
-0.7
6.0
V
VIO
Voltage at any input or output
-0.5
VCC+0.5
V
IIO
Current sourced into any input or output except
TZ_IN
-20
20
mA
IIO
Current sourced into pin TZ_IN
-5
5
mA
VESD
Electrostatic Discharge (100 pF, 1.5 k) except
TZ_IN
-2
2
KV
VESD
Electrostatic Discharge (100 pF, 1.5 k) pin
TZ_IN
-0.25
0.25
KV
Tstg
Storage Temperature
-65
150



Description

SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor's SE1000W is a fully integrated,silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features single-ended or differential outputs, selectable by wire bond options,and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. For differential outputs, a decoupling capacitor on the supply is the only
external circuitry required.

Noise performance of the SE1000W is optimized for 155 Mb/s operation, with a calculated rms noise based sensitivity of 41 dBm for 10-10 bit error rate, achieved using a detector with 0.5 pF capacitance and a responsivity of 0.95 A/W, with an infinite extinction ratio source.




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