SE1020W

Features: `Single +3.3 V power supply`Power dissipation = 110 mW (typ)`Input noise current = 180 nA rms when used with a 0.7 pF detector`Transimpedance gain = 4.0 k into a 50 load (differential)`On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing ...

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SeekIC No. : 004487304 Detail

SE1020W: Features: `Single +3.3 V power supply`Power dissipation = 110 mW (typ)`Input noise current = 180 nA rms when used with a 0.7 pF detector`Transimpedance gain = 4.0 k into a 50 load (differential)`On...

floor Price/Ceiling Price

Part Number:
SE1020W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

`Single +3.3 V power supply
`Power dissipation = 110 mW (typ)
`Input noise current = 180 nA rms when used with a 0.7 pF detector
`Transimpedance gain = 4.0 k into a 50 load (differential)
`On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk
`Differential 50 outputs
`Bandwidth (-3 dB) = 1.2 GHz
`Wide data rate range = 50 Mb/s to 1.25 Gb/s
`Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC)
`Minimal external components, supply decoupling only
`Operating junction temperature range = -40°C to +125°C




Application

·Gigabit-Ethernet systems, test equipment and modules
·OC-24 fibre optic modules and line termination
·Fibre Channel optical systems



Specifications

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below

Symbol
Parameter
Min
Max
Unit
VCC Supply Voltage
-0.7
6.0
V
VIO Voltage at any input or output
-0.5
VCC+0.5
V
IIO Current sourced into any input or output except TZ_IN
-20
+20
mA
IIO Current sourced into pin TZ_IN
-5
+5
mA
VESD Electrostatic Discharge (100 pF, 1.5 k) except TZ_IN
-2
2
KV
VESD Electrostatic Discharge (100 pF, 1.5 k) pin TZ_IN
-0.25
0.25
KV
Tstg Storage Temperature
-65
150



Description

SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and  receiver functions, from 155 Mb/s up to 12.5 Gb/s.


SiGe Semiconductor's SE1020W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features differential outputs and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram of the SE1020W is shown after the functional description, on page 3.




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