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SE1050W

Features: · Single +5 V power supply· Power dissipation = 430mW (typ)· Input noise current = 1.4 mA rms when used with a 0.2 pF detector· Transimpedance gain = 1.2 kW into a 50W load (differential)· Input current overload = 2.3 mA pk (+1.1 dBm for 0.9 A/W responsivity - meets 10 Gigabit Ethernet s...

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SE1050W: Features: · Single +5 V power supply· Power dissipation = 430mW (typ)· Input noise current = 1.4 mA rms when used with a 0.2 pF detector· Transimpedance gain = 1.2 kW into a 50W load (differential)·...

SE1050W Data Sheet

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Part Number:
SE1050W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single +5 V power supply
· Power dissipation = 430mW (typ)
· Input noise current = 1.4 mA rms when used with a 0.2 pF detector
· Transimpedance gain = 1.2 kW into a 50W load (differential)
· Input current overload = 2.3 mA pk (+1.1 dBm for 0.9 A/W responsivity - meets 10 Gigabit Ethernet specification)
· Wide linear dynamic range of 17 dB (typ)
· 50 W single-ended or 100 W differential wire bond selectable outputs
· Bandwidth (-3 dB) = 9.8 GHz
· Operates at OC-192 / STM-64 up to 10.7 Gb/s NRZ rates
· Power supply rejection for both single ended and differential modes of operation
· Optimized for PIN photodetectors
· Minimal external components, supply decoupling only
· Operating junction temperature range = -40°C to +100°C
· Equivalent to Nortel Networks AE99


Application

· SONET/SDH-based transmission systems, test equipment and modules
· OC-192 fibre optic modules and line termination
· 10 Gigabit Ethernet
· Fibre Channel
· Serial data systems up to 10.7 Gb/s


Specifications

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below.

Symbol
parameter
Min
Max
Unit
VCC
 Supply Voltage
-0.7
6.0
V
VIO
 Voltage at any input or output
-0.5
VCC+0.5
V
IIO
 Current sourced into any input or output except
TZ_IN
-20
20
mA
IIO
 Current sourced into pin TZ_IN
-5
5
mA
VESD
 Electrostatic Discharge (100 pF, 1.5 k) except
TZ_IN and ACGND
-2
2
KV
VESD
 Electrostatic Discharge (100 pF, 1.5 k) pins
TZ_IN and ACGND
-0.25
0.25
KV
Tstg
 Storage Temperature
-65
150



Description

SiGe Semiconductor of the SE1050W offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor's SE1050W is a fully integrated silicon bipolar transimpedance amplifier, providing wideband, low noise preamplication of signal current from a PIN photodetector. It features differential outputs. A ecoupling capacitor on the supply is the only external component required. A system block diagram is shown after the functional description, on page 3.

Noise performance of the SE1050W is optimized for 10 Gb/s operation,with a calculated rms noise based sensitivity of 20 dBm for 10-10 bit error rate, using a detector with 0.20 pF capacitance and a responsivity of 0.9 A/W,with an infinite extinction ratio source.




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