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SFH482-ME7800

Features: ·GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process· Anode is electrically connected to the case· High reliability· Matches all Si-Photodetectors·Hermetically sealed package·SFH 480: Same package as SFH 216· SFH 481: Same package as BPX 43, BPY 63·SFH 482: Same ...

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SeekIC No. : 004488383 Detail

SFH482-ME7800: Features: ·GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process· Anode is electrically connected to the case· High reliability· Matches all Si-Photodetectors·Hermetically sea...

SFH482-ME7800 Data Sheet

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Part Number:
SFH482-ME7800
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Description



Features:

·GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process
· Anode is electrically connected to the case
· High reliability
· Matches all Si-Photodetectors
·Hermetically sealed package
·SFH 480: Same package as SFH 216
· SFH 481: Same package as BPX 43, BPY 63
·SFH 482: Same package as BPX 38, BPX 65


Application

·Photointerrupters
· IR remote control of various equipmet


Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 481:
Betriebs- und Lagertemperatur
Operating and storage temperature range		 Top; Tstg 55 ... + 100 °C
SFH 480, SFH 482:
Betriebs- und Lagertemperatur
Operating and storage temperature range		 Top; Tstg 55 ... + 125 °C
Sperrschichttemperatur
Junction temperature		 Tj 100 °C
Sperrspannung
Reverse voltage		 VR 5 V
Durchlaßstrom
Forward current		 IF 200 mA
Stobstrom, tp = 10 ms, D = 0
Surge current		 IFSM 2.5 A
Verlustleistung
Power dissipation		 Ptot 470 mW
Wärmewiderstand
Thermal resistance		 RthJA
RthJC		 450
160		 K/W
K/W



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