SFH617A

• High Current Transfer Ratios at 10 mA: 40320% at 1 mA: 60% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity (Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option See SFH6106/16/56 Data Sheet

The SFH617A features a high current transfer ratio, low coupling capacitance and high isolation voltage. The SFH617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.

The SFH617A is designed for signal transmission between two electrically separated circuits.

The SFH617A is end-stackable with 2.54 mm spacing.

Creepage and clearance distances of >8 mm are achieved with option 6. The SFH617A complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V _RMS or DC.