Features: • Very High CTR atIF=1.0 mA,VCE=0.5 V SFH618A-2, 63125% SFH618A-3, 100200% SFH618A-4, 160320% SFH618A-5, 250500% SFH628A-2, 63200% SFH628A-3, 100320% SFH628A-4, 160500%• Specified Minimum CTR atIF=0.5 mA SFH618A,VCE=1.5 V:32% (typical 120%) SFH628A,VCE=1.5 V:50% (typical 160%...
SFH618-4: Features: • Very High CTR atIF=1.0 mA,VCE=0.5 V SFH618A-2, 63125% SFH618A-3, 100200% SFH618A-4, 160320% SFH618A-5, 250500% SFH628A-2, 63200% SFH628A-3, 100320% SFH628A-4, 160500%• Specif...
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Transistor Output Optocouplers Phototransistor Out Single CTR > 40-80%
The SFH618-4/628A feature a high current transfer ratio, low coupling capacitance and high isolation voltage. The SFH618-4 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
The SFH618-4 is designed for signal transmission between two electrically separated circuits.
The SFH618-4 is end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of >8.0 mm are achieved with option 6. The SFH618-4 complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V RMSor DC.