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SFH9140

MOSFET P-CH/100V/19A/0.2OHM

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SeekIC No. : 00163491 Detail

SFH9140: MOSFET P-CH/100V/19A/0.2OHM

SFH9140 Data Sheet

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Part Number:
SFH9140
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 19 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 19 A


Features:

`Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` 175oC Operating Temperature
` Lower Leakage Current : 10 A (Max.) @ VDS = -100V
` Lower RDS(ON) : 0.161 (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
-100
V
ID
 Continuous Drain Current (TC=25oC)
-19
A
Continuous Drain Current (TC=100oC)
-13.3
IDM
 Drain Current-Pulsed
1
-76
A
VGS
 Gate-to-Source Voltage
20
V
EAS
 Single Pulsed Avalanche Energy
2
600
mJ
IAR
 Avalanche Current
1
-19
A
EAR
 Repetitive Avalanche Energy
1
16.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
3
-6.5
V/ns
PD
 Total Power Dissipation (TC=25oC)
Linear Derating Factor
166
1.11
W
W/oC
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
oC
TL
 Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
300



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