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SFH9154

MOSFET P-CH/150V/18A/0.2OHM

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SeekIC No. : 00161226 Detail

SFH9154: MOSFET P-CH/150V/18A/0.2OHM

SFH9154 Data Sheet

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Part Number:
SFH9154
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 150 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : - 150 V


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` 150oC Operating Temperature
` Lower Leakage Current : 10 A (Max.) @ VDS = -150V
` Lower RDS(ON) : 0.140 (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
-150
V
ID
 Continuous Drain Current (TC=25oC)
-18
A
Continuous Drain Current (TC=100oC)
-11.5
IDM
 Drain Current-Pulsed
1
-72
A
VGS
 Gate-to-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
2
1215
mJ
IAR
 Avalanche Current
1
-18
A
EAR
 Repetitive Avalanche Energy
1
20.4
mJ
dv/dt
 Peak Diode Recovery dv/dt
3

-5.0
V/ns
PD
 Total Power Dissipation (TC=25oC)
Linear Derating Factor
204
1.63
W
W/oC
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
oC
TL
 Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
300



Parameters:

Technical/Catalog InformationSFH9154
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs200 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max204W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SFH9154
SFH9154



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