Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = -200V`Lower RDS(ON) : 2.25 (Typ.)Specifications Symbol Characteristic Value Units VD...
SFM9210: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = -200V`...
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|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current (TA=25) |
-0.5 |
A |
| Continuous Drain Current (TA=70) |
-0.3 | ||
|
IDM |
Drain Current-Pulsed |
-4.0 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
133 |
mJ |
|
IAR |
Avalanche Current |
-0.5 |
A |
|
EAR |
Repetitive Avalanche Energy |
0.16 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation (TA=25) * Linear Derating Factor * |
1.63 0.013 |
W W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |