SFP9Z34

MOSFET TO-220 P-CH -60V

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SeekIC No. : 00163037 Detail

SFP9Z34: MOSFET TO-220 P-CH -60V

floor Price/Ceiling Price

Part Number:
SFP9Z34
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 18 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.14 Ohms
Continuous Drain Current : - 18 A


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Opereting Temperature
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ VDS = -60V
` Low RDS(ON) : 0.106 (Typ.)



Specifications

Symbol
Characteristic
Value
Units
VDSS

Drain-to-Source Voltage

-60
V
ID
Continuous Drain Current (TC=25)
-18
A
Continuous Drain Current (TC=100)
-12.6
IDM
Drain Current-Pulsed
-72
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
55
mJ
IAR
Avalanche Current
-18
A
EAR
Repetitive Avalanche Energy
8.2
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.5
V/ns
PD
Total Power Dissipation (TC=25)
Linear Derating Factor
82
0.55
W
W/°C
TJ,TSTG
Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



Parameters:

Technical/Catalog InformationSFP9Z34
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs140 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1155pF @ 25V
Power - Max82W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SFP9Z34
SFP9Z34



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