SFRU9110

The features of the SFRU9110 are: (1)avalanche rugged technology; (2)rugged gate oxide technology; (3)lower input capacitance; (4)improved gate charge; (5)extended safe operating area; (6)lower leakage current: -10A(max.)@VDS=-100V; (7)low RDS(ON): 0.912.

The following is about the absolute maximum ratings of SFRU9110: (1)drain-to-source voltage: -100V; (2)continuous drain current(Tc=25): -2.8A; (3)continuous drain current(Tc=100): -2.0A; (4)drain current-pulsed: 11A; (5)gate-to-source voltage: ±30V; (6)single pulse avalanche energy: 52mJ; (7)avalanche current: -2.8A; (8)repetitive avalanche energy: 2.0mJ; (9)peak diode recovery dv/dt: -6.5V/ns; (10)total power dissipation(Tc=25): 2.5W; (11)operating junction and storage temperature range: -55 to +150; (12)maximum lead temp. for soldering purposes: 300.

The electrical characteristics of the SFRU9110 are: (1)drain-source breakdown voltage: -100V min; (2)breakdown voltage temp. coeff.: -0.1 V/; (3)gate threshold voltage: -2.0V min and -4.0 max; (4)gate-source leakage, forward: -100nA max; (5)gate-source leakage, reverse: 100nA max; (6)drain-to-source leakage current: -10A max at VGS=-100V; (7)static drain-source in-state resistance: 1.2; (8)forward transonductance: 1.7S; (9)input capacitance: 260pF typical and 335pF max; (10)output capacitance: 50pF typical and 80pF max; (11)reverse transfer capacitance: 17pF typical and 25pF max; (12)turn-on delay time: 10ns typical and 30ns max.