MOSFET PCh/100V/4.6a/0.6Ohm
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 4.6 A | ||
| Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220F | Packaging : | Tube |
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-100 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-4.6 |
A
|
| Continuous Drain Current ( TC=100) |
-3.2 | ||
|
IDM |
Drain Current-Pulsed |
-18 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
140 |
mJ |
|
IAR |
Avalanche Current |
-4.6 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.9 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-6.5 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
29
0.19 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |