SFS9510

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : - 2.5 A


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ V<sub>DS</sub> = -100V
` Low R_DS(ON) : 0.912 (Typ.)


Specifications

</TABLE

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	-100	V
ID	Continuous Drain Current ( TC=25)	-2.5	A
	Continuous Drain Current ( TC=100)	-1.8
IDM	Drain Current-Pulsed	-10	A
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy	50	mJ
IAR	Avalanche Current	-2.5	A
EAR	Repetitive Avalanche Energy	1.6	mJ
dv/dt	Peak Diode Recovery dv/dt	-6.5	V/ns
PD	Total Power Dissipation ( TC=25) Linear Derating Factor	16 0.11	W W/°C
TJ,TSTG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
TL	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300