SFT2010

The features of the SFT2010 are: (1)bvcbo 250 V min; (2)600 W power dissipation; (3)excellent SOA curve; (4)Es/b of 800mJ; (5)gain of over 5 at 200 A; (6)high rel comstruction including gold eutectic die mounting, aluminum wiring; (7)plannar chip construction with low leakage and very fast switching.

The following is about the absolute maximum ratings of SFT2010: (1)collector-emitter voltage: 100V; (2)collector-base voltage: 250V; (3)emitter-base voltage: 8V; (4)collector current: 200A; (5)base current: 75A; (6)total device dissipation @ TC=50: 600W; (7)derate above 50: 4W/; (8)operating and storage temperature: -65 to 200.

The electrical characteristics of the SFT2010 are: (1)collector-emitter breakdown voltage: 100V; (2)collector-base breakdown voltage: 250V; (3)emitter-base breakdown voltage: 8V; (4)collector cutoff current: 10uAdc; (5)emitter cutoff current: 10uAdc; (6)DC current gain(Ic=10A, VCE=2V): 40; (7)DC current gain(Ic=100A, VCE=5V): 30; (8)DC current gain(Ic=200A, VCE=5V): 5; (9)collector-emitter saturation voltage: 2.0V; (10)base-emitter saturation voltage: 2.2V.