Features: • High Speed Switching Transistor• Multiple Devices Reduce Board Space• High Power Dissipation: Up to 1.2 W / device• TX, TXV, S-Level screening available• Replaces both 2N2222AU & 2N2907AUSpecifications Maximum Ratings Symbol 2N2222NPN 2N2...
SFT22907GW: Features: • High Speed Switching Transistor• Multiple Devices Reduce Board Space• High Power Dissipation: Up to 1.2 W / device• TX, TXV, S-Level screening available• Re...
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| Maximum Ratings |
Symbol |
2N2222 NPN |
2N2907 PNP |
Units |
| Collector Emitter Voltage |
VCEO |
50 |
60 |
Volts |
| Collector Base Voltage |
VCBO |
75 |
60 |
Volts |
| Emitter Base Voltage |
VEBO |
6 |
5 |
Volts |
| Continuous Collector Current |
IC |
800 |
600 |
mAmps |
| Power Dissipation @ TA = 25ºC Per device |
PD |
500 |
500 |
mW |
| Power Dissipation @ TA = 25ºC Total |
660 | |||
| Operating & Storage Temperature |
Top & Tstg |
-65 to +200 |
-65 to +200 |
ºC |
| Maximum Thermal Resistance (Junction to PCB) |
RJ-PCB |
245 |
245 |
ºC/W |