SG23FI

The SG23FI is designed as one kind of reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini package, raducing installation space. And the features of this device are:(1)PWB direct mount type;(2)the most suitable detection distance: 0.8 mm;(3)visible light cut-off type;(4)low profile. And this device can be used in wide range of applications such as (1)cassette mecha; (2)cameras; (3)mini printers; (4)VTR.

The absolute maximum ratings of the SG23FI can be summarized as:(1)power dissipation: 100 mW;(2)forward current: 60 mA;(3)reverse voltage: 5 V;(4)pulse forward current: 1 A;(5)collector power dissipation: 100 mW;(6)collector current: 40 mA;(7)collector-emitter voltage: 30 V;(8)emitter-collector voltage: 5 V;(9)operating temperature: -20 to +85 ;(10)storage temperature: -30 to +85 ;(11)soldering temperature: 260 .

The electrical characteristics of SG23FI can be summarized as:(1)forward voltage: 1.2 to 1.5 V;(2)reverse current: 10 uA;(3)peak wavelength: 940 nm;(4)collector dark current: 100 nA;(5)light current: 0.3 mA;(6)leakage current: 0.2 uA;(7)rise time: 5 us;(8)fall time: 5 us. If you want to know more information such as the electrical characteristics about the SG23FI, please download the datasheet in www.seekic.com or www.chinaicmart.com.