SGA-8343

Series: -
Package / Case: SC-82A, SOT-343
Manufacturer: RFMD
Frequency: 0Hz ~ 6GHz
P1dB: 7.5dBm (5.6mW) ~ 9dBm (7.9mW)
Noise Figure: 1.4dB ~ 1.75dB
RF Type: PCS, RFiD, 3G
Voltage - Supply: 4V
Current - Supply: 50mA
Test Frequency: 1.9GHz
Packaging: Tape & Reel (TR)
Gain: 19.3dB


Features:

• 6 GHz Useful Bandwidth
• Low FMIN: 0.9 dB @ 0.9 GHz 1.1 dB @ 1.9 GHz
• High Gain (Gmax): 24 dB @ 0.9 GHz 19 dB @ 1.9 GHz
• Easily Matched with | OPT| = 0.17 @ 1.9 GHz
• OIP3 = +28.5 dBm, P1dB = +13 dBm
• Low Cost High Performance SiGe HBT


Application

• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
• Oscillators


Specifications

SYMBOL	parameter	TYP.	Frequeny	MIN.	MAX.	UNIT
GMAX	Maximun Available Gain Z=ZS*	23.9 19.3 17.7	850MHZ 1095MHZ 2400MZ			db
S 12	Insertsion Gain	26.8 16.3 14.3	850MHZ 1095MHZ	15.7		dBM
S 21	Insertsion Nosise Figure	0.9 1.1 1.2	850MHZ 1095MHZ			dBM
S 11	RWSVtupnI	10.0 3.3				MHZ
S 22	RWVtuptuO	1.11	1095MHZ		D	-
P I3	Output third Order 1db Compresion	1.21	1095MHZ			dB
FD	Output third Order Intercept		1095MHZ			dB
TD	Device Operating Volate	180		120	300	V
VD	Device Operating Current	6.0		5.7		PS
ID	Thermal Resistant	200				.c/w

Description

Stanford Microdevices' SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device is easily matched as OPT very close to 50 ohms. This device provides high gain, low NF, and excellent linearity at a low cost.