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SGB06N60

IGBT Transistors FAST IGBT NPT TECH 600V 6A

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SeekIC No. : 00143236 Detail

SGB06N60: IGBT Transistors FAST IGBT NPT TECH 600V 6A

SGB06N60 Data Sheet

floor Price/Ceiling Price

US $ .52~.7 / Piece | Get Latest Price
Part Number:
SGB06N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.7
  • $.58
  • $.54
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
   - Motor controls
   - Inverter
• NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Complete product spectrum and PSpice Models


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage 
VCE
600
V
DC collector current
TC = 25
TC = 100
IC
12
6.9
Pulsed collector current, tp limited by Tjmax
ICpul s
24
Turn off safe operating area
VCE 600V, Tj 150
-
24
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 6 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25
EAS
34
mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150
tSC
10
µs
Power dissipation, TC=25
Pt o t
68
W
Operating and storage temperature
Tj , Tstg
-55... +150



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