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SGB04N60

IGBT Transistors FAST IGBT NPT TECH 600V 4A

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SeekIC No. : 00143809 Detail

SGB04N60: IGBT Transistors FAST IGBT NPT TECH 600V 4A

SGB04N60 Data Sheet

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Part Number:
SGB04N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/11

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
9.4
4.9
A
Pulsed collector current, tp limited by Tjmax
I Cpul s
19
Turn off safe operating area
VCE 600V, Tj 150°C
-
19
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS
25
mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
µs
Power dissipation
TC = 25°C
P t o t
50
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C



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