SGD-100

The SGD-100 is designed as one kind of GaAs schottky barrier diodes for C to X band, mixer, modulator applications.

SGD-100 has two features. (1)Very small sized package. (2)Less parasitic components, conversion loss. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its peak reverse voltage would be 4.5V. (2)Its reverse voltage would be 4V. (3)Its peak forward current would be 150mA. (4)Its average rectified current would be 50mA. (5)Its junction temperature would be 150°C. (6)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SGD-100 are concluded as follow. (1)Its forward voltage would be typ 0.8V and max 0.9V with conditions of If=20mA. (2)Its reverse voltage would be min 4.0V and typ 6.0V with conditions of Ir=10uA. (3)Its interterminal capacitance would be typ 0.3pF and max 0.4pF with conditions of V=0V and f=1MHz. (4)Its series resistance would be typ 1.5ohms and max 3.0ohms with conditions of If=20mA. (5)Its conversion loss would be typ 4.0dB with conditions of measured using the DC incremental method and f=10.678GHz and P=10mW. It should be noted that the DC incremental method means conversion loss measurement diagram. For measurement of conversion loss, do a sampling from the lot population and use the DC incremental method for measurement. It should be noted that information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. And so on. At present we have not got so much information about this IC and we would try hard to get more information about SGD-100. If you have any question or suggestion or want to know more information please contact us for details. Thank you!