IGBT Transistors
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1500 V | ||
| Collector-Emitter Saturation Voltage : | 5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 10 A | Gate-Emitter Leakage Current : | 125 W | ||
| Power Dissipation : | 125 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-264-3 | Packaging : | Tube |