IGBT Transistors 900V/60A/wFRD TO-264
SGL60N90DG3TU: IGBT Transistors 900V/60A/wFRD TO-264
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.0 V @ IC = 60...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 900 V | ||
| Collector-Emitter Saturation Voltage : | 1.4 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
| Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 500 nA | ||
| Power Dissipation : | 180 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-264-3 | Packaging : | Tube |