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SGM2016AM

Features: • Low voltage operation• Low noise NF = 1.2dB (typ.) at 900MHz• High gain Ga = 21dB (typ.) at 900MHz• High stability• Built-in gate protection diodeApplicationUHF-band high-frequency amplifier, mixer, and oscillatorSpecifications• Drain to source volta...

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SeekIC No. : 004489440 Detail

SGM2016AM: Features: • Low voltage operation• Low noise NF = 1.2dB (typ.) at 900MHz• High gain Ga = 21dB (typ.) at 900MHz• High stability• Built-in gate protection diodeApplicatio...

SGM2016AM Data Sheet

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Part Number:
SGM2016AM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode


Application

UHF-band high-frequency amplifier, mixer, and oscillator


Specifications

• Drain to source voltage                  VDSX                   6           V
• Gate 1 to source voltage                VG1S                4           V
• Gate 2 to source voltage                VG2S                4           V
• Drain current                                  ID                       18        mA
• Allowable power dissipation           PD                    100       mW
• Channel temperature                     Tch                   125         
• Storage temperature                     Tstg    55 to +150           


Description

The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This SGM2016AM/AP FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.




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