Position: Home  > All Categories> Integrated Circuits (ICs) > SGM2016AN

SGM2016AN

Features: • Ultra-small package• Low voltage operation• Low noise NF = 1.2dB (typ.) at 900MHz• High gain Ga = 21dB (typ.) at 900MHz• High stability• Built-in gate protection diodeApplicationUHF-band high-frequency amplifier, mixer, and oscillatorSpecifications&#...

product image

SGM2016AN Picture
See larger image
SeekIC No. : 004489441 Detail

SGM2016AN: Features: • Ultra-small package• Low voltage operation• Low noise NF = 1.2dB (typ.) at 900MHz• High gain Ga = 21dB (typ.) at 900MHz• High stability• Built-in gate...

SGM2016AN Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SGM2016AN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode


Application

UHF-band high-frequency amplifier, mixer, and oscillator


Specifications

• Drain to source voltage                  VDSX                   12          V
• Gate 1 to source voltage                VG1S                5           V
• Gate 2 to source voltage                VG2S                5           V
• Drain current                                  ID                       55        mA
• Allowable power dissipation           PD                    100       mW
• Channel temperature                     Tch                   125         
• Storage temperature                     Tstg    55 to +150           


Description

The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This SGM2016AN FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Undefined Category
VI-B63-IU
X27 589
Optical Inspection Equipment
AA924
A21K4B
Resistors
A101G
3006P-1-205LF
Filters
PICO2205A
PICO2204A
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more