Purchase SGS23N60UF, In-stock SGS23N60UF From SeekIC.
MFG:FAIRCHILD Package Cooled:TO
- Table of contents:
SGS23N60UF
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Suppliers
DataSheet
General Description
SGS23N60UF Maximum Ratings
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 23 | A |
| Collector Current @ TC = 100 | 12 | A | |
| I CM(1) | Pulsed Collector Current | 92 | A |
| PD | Maximum Power Dissipation @ TC = 25 | 73 | W |
| Maximum Power Dissipation @ TC = 100 | 29 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGS23N60UF Features
• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A
• High input impedance
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A
• High input impedance
SGS23N60UF Typical Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
SGS23N60UF
PDF/DataSheet Download
- Datasheet: SGS23N60UF
- File Size: 552154 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UF series is designed for applications such as motor control and general inverters where high speed switching isa required feature.
SGS125
The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power linear and switching applications.
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Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and g...
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