MFG:TO-220F Package Cooled:7850 D/C:FAIRCHIL
MFG: TO-220F
Package Cooled: 7850
D/C: FAIRCHIL
Description: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switc...
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 23 | A |
| Collector Current @ TC = 100 | 12 | A | |
| I CM(1) | Pulsed Collector Current | 92 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 12 | A |
| IFM | Diode Maximum Forward Current | 92 | A |
| PD | Maximum Power Dissipation @ TC = 25 | 73 | W |
| Maximum Power Dissipation @ TC = 100 | 29 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGS23N60UFD
PDF/DataSheet Download
IGBT ULT FAST 600V 6.5A TO-220F
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UF series is designed for applications such as motor control and general inverters where high speed switching isa required feature.
The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power linear and switching applications.
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