SGSD200

Emitter- Base Voltage VEBO :
Power Dissipation :
Maximum Collector Cut-off Current : 500 uA
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Maximum DC Collector Current : 25 A
Mounting Style : Through Hole
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Operating Temperature : + 150 C


Application

·GENERAL PURPOSE SWITCHING APPLICATION
·GENERAL PURPOSE AMPLIFIERS


Description

The SGSD100 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-218 plastic package. SGSD200 is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200.

Parameters:

Technical/Catalog Information	SGSD200
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	25A
Power - Max	130W
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 20A, 3V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 20mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGSD200 SGSD200 497 7422 5 ND 49774225ND 497-7422-5