SGSD310

The SGSD310 is designed as one kind of silicon multiepitaxial plannar NPN transistors in monolithic darlington configuration with integrated speed-up diode, mounted respectively in the TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. No parasitic collector-emitter diode, so that an external fast recovery free wheeling diode can be added. It is particularly suitable as output stage in high power, fast switching applications.

Some absolute maximum ratings of SGSD310 have been concluded into several points as follow. (1)Its collector to emitter voltage Rbe=50ohms would be 600V. (2)Its collector to emitter voltage Ib=0 would be 400V. (3)Its collector current would be 28A. (4)Its collector peak current tp<10ms would be 40A. (5)Its base current would be 6A. (6)Its base peak current tp<10ms would be 12A. (7)Its total power dissipation at Tc<25°C would be 150W for TO-3 and 125W for TO-218 and 60W for ISOWATT218. (8)Its storage temperature range would be from -65°C to 175°C for TO-3 and would be from -65°C to 150°C for TO-218 and ISOWATT218. (9)Its max operating junction temperature would be 175°C for TO-3 and would be 150°C for TO-218 and ISOWATT218. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SGSD310 are concluded as follow. (1)Its collector cutoff current at Vbe=-1.5V would be max 100uA and 2mA for Tc=100°C. (2)Its emitter cutoff current would be max 30mA. (3)Its collector to emitter sustaining voltage would be min 400V. (4)Its collector to emitter saturation voltage would be max 2V at Ic=10A and Ib=0.5A and would be max 2.5V at Ic=18A and Ib=1.8A and would be max 3V at Ic=22A and Ib=2.2A and would be max 5V at Ic=28A and Ib=5.6A. And so on. If you have any question or suggestion or want to know more information of SGSD310 please contact us for details. Thank you!